APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 1 C 8 nt c2 out vbus nt c1 0/vbu s q1 g1 q2 s1s2 g2 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 1000 v i d continuous drain current t c = 25c 36 a t c = 80c 27 i dm pulsed drain current 144 v gs gate - source voltage 30 v r dson drain - source on resistance 270 m p d maximum power dissipation t c = 25c 694 w i ar avalanche current (repetitive and non repetitive) 18 a e ar repetitive avalanche energy 50 mj e as single pulse avalanche energy 2500 v dss = 1000v r dson = 230m typ @ tj = 25c i d = 36a @ tc = 25c application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant phase leg series & parallel diodes mosfet power module downloaded from: http:///
APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 2 C 8 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 1000v t j = 25c 200 a v gs = 0v,v ds = 800v t j = 125c 1000 r ds(on) drain C source on resistance v gs = 10v, i d = 18a 230 270 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 5ma 3 5 v i gss gate C source leakage current v gs = 30 v, v ds = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1mhz 8700 pf c oss output capacitance 1430 c rss reverse transfer capacitance 240 q g total gate charge v gs = 10v v bus = 500v i d = 36a 308 nc q gs gate C source charge 52 q gd gate C drain charge 194 t d(on) turn-on delay time inductive switching @ 125c v gs = 15v v bus = 667v i d = 36a r g = 2.5 10 ns t r rise time 12 t d(off) turn-off delay time 121 t f fall time 35 e on turn-on switching energy inductive switching @ 25c v gs = 15v, v bus = 667v i d = 36a, r g = 2.5 ? 1278 j e off turn-off switching energy 760 e on turn-on switching energy inductive switching @ 125c v gs = 15v, v bus = 667v i d = 36a, r g = 2.5 ? 2092 j e off turn-off switching energy 902 r thjc junction to case thermal resistance 0.18 c/w series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r = 1000v 500 a i f dc forward current t c = 65c 90 a v f diode forward voltage i f = 90a 1.9 2.3 v i f = 180a 2.2 i f = 90a t j = 125c 1.7 t rr reverse recovery time i f = 90a v r = 667v di/dt = 400a/s t j = 25c 290 ns t j = 125c 390 q rr reverse recovery charge t j = 25c 2010 nc t j = 125c 7050 r thjc junction to case thermal resistance 0.45 c/w downloaded from: http:///
APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 3 C 8 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r =1000v 150 a i f dc forward current t c = 80c 80 a v f diode forward voltage i f = 80a 2.5 3.5 v i f = 140a 3.1 i f = 80a t j = 125c 2 t rr reverse recovery time i f = 80a v r = 667v di/dt = 400a/s t j = 25c 250 ns t j = 125c 315 q rr reverse recovery charge t j = 25c 830 nc t j = 125c 3300 r thjc junction to case thermal resistance 0.65 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 4 C 8 sp4 package outline (dimensions in mm) see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com downloaded from: http:///
APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 5 C 8 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse dur ation 5v 5.5v 6v 6.5v 7v 0 20 40 60 80 100 120 0 5 10 15 20 25 30 i d , drain current (a) v ds , drain to source voltage (v) v gs =15&8v low voltage output characteristics t j =25c t j =125c 0 20 40 60 80 100 120 140 160 0123456789 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics v ds > i d (on)xr ds (on)max 250 s pulse test @ < 0.5 duty cycle v gs =10v v gs =20v 0.9 1 1.1 1.2 1.3 0 2 04 06 08 01 0 0 i d , drain current (a) r ds(on) vs drain current r ds (on) drain to source on resistance normalized to v gs =10v @ 18a 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 i d , dc drain current (a) t c , case temperature ( c) dc drain current vs case temperature downloaded from: http:///
APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 6 C 8 0.95 1.00 1.05 1.10 1.15 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltag e (normalized) breakdown voltage vs temperature 1.0 1.5 2.0 2.5 25 50 75 100 125 150 t j , junction temperature (c) on resistance vs temperature r ds (on), drain to source on resistance (normalized) v gs =10v i d =18a 0.6 0.7 0.8 0.9 1.0 25 50 75 100 125 150 t c , case temperature (c) threshold voltage vs temperature v gs (th), threshold voltage (normalized) 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 i d , drain current (a) v ds , drain to source voltage (v) maximum safe operating area limited by r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =36a t j =25c downloaded from: http:///
APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 7 C 8 delay times vs current t d(on) t d(off) 0 20 40 60 80 100 120 140 160 10 20 30 40 50 60 70 80 i d , drain current (a) t d(on) and t d(off) (ns) v ds =667v r g =2.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 10 20 30 40 50 60 70 80 i d , drain current (a) t r and t f (ns) v ds =667v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off 0 1 2 3 4 10 20 30 40 50 60 70 80 i d , drain current (a) switching energy (mj) v ds =667v r g =2.5 ? t j =125c l=100h e on e off e off 0 1 2 3 4 5 03581 01 31 5 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =667v i d =36a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 14 18 22 26 30 34 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =667v d=50% r g =2.5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage downloaded from: http:///
APTM100A23STG APTM100A23STG C rev 5 october, 2013 www.microsemi.com 8 C 8 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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